? 2016 ixys corporation, all rights reserved ds100701(01/16) x2-class power mosfet IXTT34N65X2HV v dss = 650v i d25 = 34a r ds(on) ? ? ? ? ? 96m ? ? ? ? ? symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 650 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 125 ? c 150 ? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 96 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 650 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 650 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c34a i dm t c = 25 ? c, pulse width limited by t jm 68 a i a t c = 25 ? c17a e as t c = 25 ? c1j dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns p d t c = 25 ? c 540 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c weight 4 g n-channel enhancement mode avalanche rated features ? high voltage package ? low r ds(on) and q g ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls advance technical information to-268hv (ixtt) g d (tab) s g = gate d = drain s = source tab = drain
ixys reserves the right to change limits, test conditions, and dimensions. IXTT34N65X2HV note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 34 a i sm repetitive, pulse width limited by t jm 136 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 390 ns q rm 4.2 ???????????? c i rm 21.8 a i f = 17a, -di/dt = 100a/ s v r = 100v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 20 33 s r gi gate input resistance 0.90 ? c iss 3000 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 2180 pf c rss 1.7 pf c o(er) 125 pf c o(tr) 490 pf t d(on) 30 ns t r 48 ns t d(off) 68 ns t f 30 ns q g(on) 54 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 15 nc q gd 20 nc r thjc 0.23 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss
? 2016 ixys corporation, all rights reserved IXTT34N65X2HV fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 00.511.522.533.5 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 5v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 0123456789 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v 4v fig. 4. r ds(on) normalized to i d = 17a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 17a i d = 34a fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7v 6v 5v 8v fig. 5. r ds(on) normalized to i d = 17a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 1020304050607080 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. IXTT34N65X2HV fig. 8. input admittance 0 10 20 30 40 50 60 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 7. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 9. transconductance 0 10 20 30 40 50 60 0 102030405060 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 10. forward voltage drop of intrinsic diode 0 20 40 60 80 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 11. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 55 q g - nanocoulombs v gs - volts v ds = 325v i d = 17a i g = 10ma fig. 12. capacitance 1 10 100 1,000 10,000 100,000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss
? 2016 ixys corporation, all rights reserved IXTT34N65X2HV fig. 14. forward-bias safe operating area 0.1 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 100s r ds( on ) limit 1ms fig. 13. output capacitance stored energy 0 5 10 15 20 25 30 0 100 200 300 400 500 600 v ds - volts e oss - microjoules fig. 15. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w ixys ref: t_34n65x2 (x5-s602) 1-06-16
ixys reserves the right to change limits, test conditions, and dimensions. IXTT34N65X2HV pins: 1 - gate 2 - source 3 - drain to-268hv outline
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